Invention Grant
- Patent Title: Semiconductor image sensor
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Application No.: US16706189Application Date: 2019-12-06
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Publication No.: US10797096B2Publication Date: 2020-10-06
- Inventor: Keng-Yu Chou , Wei-Chieh Chiang , Chen-Jong Wang , Chien-Hsien Tseng , Kazuaki Hashimoto
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hinschu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hinschu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146

Abstract:
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A depth of the reflective grid is less than a depth of the isolation grid. A width of the low-n grid is greater than a width of the reflective grid.
Public/Granted literature
- US20200111822A1 SEMICONDUCTOR IMAGE SENSOR Public/Granted day:2020-04-09
Information query
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