An imaging device includes a semiconductor substrate, pixels, a charge detector, charge storage portions, an output gate portion and a shift gate portion. The pixels and the charge detector are provided in the semiconductor substrate. The charge storage portions are provided on the charge detector side of the pixels, and linked to the pixels. The output gate portion is positioned between the charge detector and the charge storage portions, and includes charge transfer channels extending in a radial configuration in directions from the charge detector toward the pixels. The shift gate portion is positioned between one charge storage portion and one charge transfer channel. The shift gate portion includes a gate electrode provided on the semiconductor substrate. A planar configuration of the gate electrode has a side orthogonal to the extending direction of the one charge transfer channels, the side being most proximal to the one charge transfer channel.