• Patent Title: Semiconductor device and method for producing semiconductor device
  • Application No.: US16311228
    Application Date: 2017-06-28
  • Publication No.: US10797105B2
    Publication Date: 2020-10-06
  • Inventor: Naoki BannoMunehiro Tada
  • Applicant: NEC Corporation
  • Applicant Address: JP Tokyo
  • Assignee: NEC CORPORATION
  • Current Assignee: NEC CORPORATION
  • Current Assignee Address: JP Tokyo
  • Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@42dc1a54
  • International Application: PCT/JP2017/023765 WO 20170628
  • International Announcement: WO2018/003864 WO 20180104
  • Main IPC: H01L27/24
  • IPC: H01L27/24 H01L21/8239 H01L27/105 H01L45/00
Semiconductor device and method for producing semiconductor device
Abstract:
Provided are: a semiconductor device in which a non-volatile switch provided with a rectifying element and a non-volatile element provided with no rectifying element are formed in the same wiring; and a method for producing the semiconductor device. The semiconductor device includes a first switching element and a second switching element disposed in a signal path of a logic circuit. The first switching element includes a rectifying element and a variable resistance element. The second switching element does not include the rectifying element but includes a variable resistance element. The first switching element and the second switching element are formed in the same wiring layer.
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