- Patent Title: Semiconductor device and method for producing semiconductor device
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Application No.: US16311228Application Date: 2017-06-28
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Publication No.: US10797105B2Publication Date: 2020-10-06
- Inventor: Naoki Banno , Munehiro Tada
- Applicant: NEC Corporation
- Applicant Address: JP Tokyo
- Assignee: NEC CORPORATION
- Current Assignee: NEC CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@42dc1a54
- International Application: PCT/JP2017/023765 WO 20170628
- International Announcement: WO2018/003864 WO 20180104
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L21/8239 ; H01L27/105 ; H01L45/00

Abstract:
Provided are: a semiconductor device in which a non-volatile switch provided with a rectifying element and a non-volatile element provided with no rectifying element are formed in the same wiring; and a method for producing the semiconductor device. The semiconductor device includes a first switching element and a second switching element disposed in a signal path of a logic circuit. The first switching element includes a rectifying element and a variable resistance element. The second switching element does not include the rectifying element but includes a variable resistance element. The first switching element and the second switching element are formed in the same wiring layer.
Public/Granted literature
- US20190189690A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2019-06-20
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