A semiconductor device is disclosed that includes a substrate; a first semiconductor region arranged in the cell region on a first surface side of the substrate; a second semiconductor region arranged in a cell region; a channel stopper electrode arranged in a termination region; a first electrode arranged on the first surface and electrically connected to the second semiconductor region; an insulation film arranged between the channel stopper electrode and the first electrode; first conductors arranged inside the insulation film; second conductors arranged on the insulation film; and a second electrode arranged on a second surface side of the substrate. A width of an overlapping portion in a height direction of the first conductor and the second conductor on the first electrode side is larger than a width of an overlapping portion in the height direction of the first and second conductors on the channel stopper electrode side.