Invention Grant
- Patent Title: Integrated circuit devices
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Application No.: US16106168Application Date: 2018-08-21
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Publication No.: US10797134B2Publication Date: 2020-10-06
- Inventor: Myoung-soo Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@35297bce
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/06 ; H01L29/423 ; H01L29/45 ; H01L21/762 ; H01L29/78 ; H01L29/66 ; H01L21/768 ; H01L21/265 ; H01L21/02 ; H01L29/49 ; H01L21/3213 ; H01L21/027 ; H01L21/3215 ; H01L21/308 ; H01L21/266
Abstract:
Integrated circuit devices are provided. An integrated circuit device includes a substrate and a device isolation film on the substrate. An active region of the substrate is defined by the device isolation film on the substrate and has a first width in a horizontal direction. A gate electrode is on the active region and has a second width equal to or less than the first width of the active region in the horizontal direction. The integrated circuit device includes an insulating spacer over the device isolation film and the active region.
Public/Granted literature
- US20190206995A1 INTEGRATED CIRCUIT DEVICES Public/Granted day:2019-07-04
Information query
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