Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US16688801Application Date: 2019-11-19
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Publication No.: US10797140B2Publication Date: 2020-10-06
- Inventor: Che-Cheng Chang , Chih-Han Lin , Horng-Huei Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/417 ; H01L29/78 ; H01L29/66 ; H01L21/265 ; H01L21/324 ; H01L21/285
Abstract:
A semiconductor device and method of manufacture are provided. A source/drain region is formed next to a spacer, which is adjacent to a gate electrode. An implantation is performed through an implantation mask into the source/drain region as well as the first spacer, forming an implantation region within the spacer.
Public/Granted literature
- US20200111879A1 Semiconductor Device and Method Public/Granted day:2020-04-09
Information query
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