Invention Grant
- Patent Title: Metal gate structures for field effect transistors
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Application No.: US16438168Application Date: 2019-06-11
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Publication No.: US10797151B2Publication Date: 2020-10-06
- Inventor: Chih-Wei Wang , Chia-Ming Tsai , Ke-Chih Liu , Chandrashekhar Prakash Savant , Tien-Wei Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/49 ; H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L21/28 ; H01L27/088 ; H01L29/66
Abstract:
The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.
Public/Granted literature
- US20200105894A1 METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS Public/Granted day:2020-04-02
Information query
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