Invention Grant
- Patent Title: FinFETs having epitaxial capping layer on fin and methods for forming the same
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Application No.: US15367871Application Date: 2016-12-02
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Publication No.: US10797164B2Publication Date: 2020-10-06
- Inventor: Ming-Hua Yu , Chih-Pin Tsao , Hou-Yu Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L27/088 ; H01L21/3065 ; H01L21/324 ; H01L21/8234 ; H01L29/06 ; H01L29/10 ; H01L21/02 ; H01L21/265 ; H01L29/32
Abstract:
A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with dopants, and forming a capping layer on a top surface and sidewalls of the semiconductor fin. The method further includes forming a dielectric on the capping layer, and forming a gate electrode on the dielectric.
Public/Granted literature
- US20170084725A1 FINFETS HAVING EPITAXIAL CAPPING LAYER ON FIN AND METHODS FOR FORMING THE SAME Public/Granted day:2017-03-23
Information query
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