Invention Grant
- Patent Title: Selective growth for high-aspect ratio metal fill
-
Application No.: US16166412Application Date: 2018-10-22
-
Publication No.: US10797176B2Publication Date: 2020-10-06
- Inventor: Chih-Nan Wu , Shiu-Ko JangJian , Chun Che Lin , Wen-Cheng Hsuku
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28 ; H01L21/285 ; H01L29/66 ; H01L21/3213 ; H01L29/49 ; H01L29/423 ; H01L23/485 ; H01L21/768 ; H01L29/51 ; H01L29/417 ; H01L21/321 ; H01L23/532
Abstract:
An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor device includes a substrate having a gate structure formed thereupon. The gate structure includes a gate dielectric layer disposed on the substrate, a growth control material disposed on a side surface of the gate structure, and a gate electrode fill material disposed on the growth control material. The gate electrode fill material is also disposed on a bottom surface of the gate structure that is free of the growth control material. In some such embodiments, the gate electrode fill material contacts a first surface and a second surface that are different in composition.
Public/Granted literature
- US20190058063A1 Selective Growth for High-Aspect Ratio Metal Fill Public/Granted day:2019-02-21
Information query
IPC分类:
