Invention Grant
- Patent Title: Semiconductor device having gate electrode overlapping semiconductor film
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Application No.: US15614694Application Date: 2017-06-06
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Publication No.: US10797179B2Publication Date: 2020-10-06
- Inventor: Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5feaa6e3
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/417 ; H01L29/78 ; G02F1/1368
Abstract:
A semiconductor device that can operate at high speed or having high strength against stress is provided. One embodiment of the present invention is a semiconductor device including a semiconductor film including a channel formation region and a pair of impurity regions between which the channel formation region is positioned; a gate electrode overlapping side and top portions of the channel formation region with an insulating film positioned between the gate electrode and the side and top portions; and a source electrode and a drain electrode in contact with side and top portions of the pair of impurity regions.
Public/Granted literature
- US20170271526A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-21
Information query
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