Invention Grant
- Patent Title: Semiconductor device, method for manufacturing the same, and electronic device
-
Application No.: US16703175Application Date: 2019-12-04
-
Publication No.: US10797180B2Publication Date: 2020-10-06
- Inventor: Daigo Ito , Takahisa Ishiyama , Katsuaki Tochibayashi , Kazuya Hanaoka
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@34b78017
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/67 ; H01L27/146 ; H01L29/04 ; H01L29/423 ; H01L29/66 ; H01L27/12
Abstract:
The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer, and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.
Public/Granted literature
- US20200105942A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE Public/Granted day:2020-04-02
Information query
IPC分类:
