Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
-
Application No.: US16327969Application Date: 2017-06-27
-
Publication No.: US10797181B2Publication Date: 2020-10-06
- Inventor: Tomoyoshi Mishima , Fumimasa Horikiri
- Applicant: HOSEI UNIVERSITY , SCIOCS COMPANY LIMITED , SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Tokyo JP Ibaraki JP Tokyo
- Assignee: HOSEI UNIVERSITY,SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: HOSEI UNIVERSITY,SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo JP Ibaraki JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7375fa39
- International Application: PCT/JP2017/023554 WO 20170627
- International Announcement: WO2018/037705 WO 20180301
- Main IPC: H01L29/872
- IPC: H01L29/872 ; C23C16/34 ; H01L21/205 ; H01L29/868 ; H01L33/32 ; H01L29/06 ; H01L21/20 ; H01L29/861 ; H01L29/47 ; H01L29/20 ; H01L29/66
Abstract:
A semiconductor device is included a first semiconductor layer with n-type conductivity, containing a gallium nitride-based semiconductor, a second semiconductor layer with p-type conductivity, which is laminated directly on the first semiconductor layer and contains a gallium nitride-based semiconductor added with a p-type impurity at a concentration of 1×1020 cm−3 or more, a first electrode disposed in contact with the first semiconductor layer, and a second electrode disposed in contact with the second semiconductor layer, and the semiconductor device functions as a pn-junction diode.
Public/Granted literature
- US20190189808A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-06-20
Information query
IPC分类:
