- Patent Title: P-type amorphous oxide semiconductor including gallium, method of manufacturing same, and solar cell including same and method of manufacturing said solar cell
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Application No.: US15127174Application Date: 2015-03-17
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Publication No.: US10797192B2Publication Date: 2020-10-06
- Inventor: Jin Jang , Christophe Vincent Avis , Hyeong Pil Kim
- Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Applicant Address: KR Yongin-si, Gyeonggi-Do
- Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Current Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Current Assignee Address: KR Yongin-si, Gyeonggi-Do
- Agency: Hauptman Ham, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@286cfd96 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@39e25741
- International Application: PCT/KR2015/002587 WO 20150317
- International Announcement: WO2015/142038 WO 20150924
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L51/42 ; H01L31/032 ; H01L29/786 ; H01L31/18 ; H01L51/00
Abstract:
a p-type amorphous oxide semiconductor including gallium, a method of manufacturing the same, a solar cell including the same and a method of manufacturing the solar cell are disclosed. The p-type oxide semiconductor where gallium (Ga) is further combined with combination of one or more components selected from a group of CuS, SnO, ITO, IZTO, IGZO and IZO is provided.
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