Invention Grant
- Patent Title: Bias control structure for avalanche photodiodes
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Application No.: US16253475Application Date: 2019-01-22
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Publication No.: US10797193B2Publication Date: 2020-10-06
- Inventor: Alireza Samani , David Plant , Michael Ayliffe
- Applicant: Lumentum Operations LLC
- Applicant Address: US CA Milpitas
- Assignee: Lumentum Operations LLC
- Current Assignee: Lumentum Operations LLC
- Current Assignee Address: US CA Milpitas
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L31/10
- IPC: H01L31/10 ; H01L31/02 ; H01L31/107 ; H01L31/028 ; H01L31/105

Abstract:
According to some implementations, an avalanche photodiode may include a photon absorbing layer to absorb photons of an optical beam and to provide a response. The avalanche photodiode may include a gain response layer to provide a gain to the response. The avalanche photodiode may include a bias control structure connected to the gain response layer to control an electric field in the photon absorbing layer and the gain response layer.
Public/Granted literature
- US20190229227A1 BIAS CONTROL STRUCTURE FOR AVALANCHE PHOTODIODES Public/Granted day:2019-07-25
Information query
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