The invention relates to a method for manufacturing an optoelectronic device (1), comprising the following steps: a) providing a growth substrate (10) made from a semiconductor material; b) forming a plurality of diodes (20) each comprising a lower face (20i); c) removing at least a portion (12; 13) of the substrate so as to free the lower face (20i); wherein: step a) involves producing a lower part and an upper part of the substrate, the upper part (12) having a uniform thickness (eref) and a level of doping less than that of the lower part; step c) involving removal of the lower part (11) by selective chemical etching with respect to the upper part (12).