Invention Grant
- Patent Title: Piezoelectric PTZT film, and process for producing liquid composition for forming said piezoelectric film
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Application No.: US15549797Application Date: 2016-02-15
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Publication No.: US10797219B2Publication Date: 2020-10-06
- Inventor: Toshihiro Doi , Nobuyuki Soyama
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@72cab0c4
- International Application: PCT/JP2016/054292 WO 20160215
- International Announcement: WO2016/133045 WO 20160825
- Main IPC: H01L41/187
- IPC: H01L41/187 ; H01L41/18 ; H01L41/43 ; H01L41/318 ; C01G35/00 ; C04B35/499 ; H01L41/319

Abstract:
A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, β-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.
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