Invention Grant
- Patent Title: Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same
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Application No.: US16212257Application Date: 2018-12-06
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Publication No.: US10797227B2Publication Date: 2020-10-06
- Inventor: Quang Le , Zhanjie Li , Zhigang Bai , Paul Vanderheijden , Michael Ho
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/10 ; H01F10/32 ; G11C11/16 ; H01L27/22
Abstract:
A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.
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