Invention Grant
- Patent Title: Multivalent oxide cap for analog switching resistive memory
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Application No.: US15852245Application Date: 2017-12-22
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Publication No.: US10797235B2Publication Date: 2020-10-06
- Inventor: Takashi Ando , Marwan H. Khater , Seyoung Kim , Hiroyuki Miyazoe
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L45/00 ; H01L27/24
Abstract:
A memory includes a base oxide provided between a first electrode and a second electrode, and a multivalent oxide provided between the first electrode and the second electrode. The multivalent oxide switches between at least two oxidative states.
Public/Granted literature
- US20180138401A1 MULTIVALENT OXIDE CAP FOR ANALOG SWITCHING RESISTIVE MEMORY Public/Granted day:2018-05-17
Information query
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