Invention Grant
- Patent Title: Silicon-based anode active material and method for manufacturing same
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Application No.: US15538592Application Date: 2015-12-30
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Publication No.: US10797312B2Publication Date: 2020-10-06
- Inventor: Young Tai Cho , Yong Gil Choi , Seung Chul Park , Seon Park , Hee Young Seo , Jee Hye Park , Yong Eui Lee , Chul Hwan Kim
- Applicant: Nexeon Ltd
- Applicant Address: GB Oxfordshire
- Assignee: Nexeon Ltd.
- Current Assignee: Nexeon Ltd.
- Current Assignee Address: GB Oxfordshire
- Agency: Choate, Hall & Stewart LLP
- Agent William R. Haulbrook; Michael D. Schmitt
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2837968c
- International Application: PCT/KR2015/014530 WO 20151230
- International Announcement: WO2016/108645 WO 20160707
- Main IPC: H01M4/38
- IPC: H01M4/38 ; H01M4/36 ; H01M4/62 ; H01M4/48 ; H01M4/04 ; H01M4/02

Abstract:
The present invention relates to a silicon-based anode active material and a method for manufacturing the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, and having a carbon-based conductive film coated on the outermost periphery thereof; and boron doped inside the particles, wherein with respect to the total weight of the particles and the doped boron, the boron is included in the amount of 0.01 weight % to 17 weight %, and the oxygen is included in the amount of 16 weight % to 29 weight %.
Public/Granted literature
- US20170352883A1 SILICON-BASED ANODE ACTIVE MATERIAL AND METHOD FOR MANUFACTURING SAME Public/Granted day:2017-12-07
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