Provided is a fabricating method of a pattern, which includes preparing a first substrate having a first width and a first thickness, stretching the first substrate and preparing a second substrate having a second width and a second thickness, forming a base layer made of a material of a pattern which will be formed on the second substrate, removing a predetermined region of the base layer and forming a first pattern having a first line width and a first height on the second substrate, and removing a tensile force applied to the second substrate to restore the second substrate back to being the first substrate and forming a second pattern having a second line width and a second height on the first substrate. Fineness of a line width can be achieved by forming the first pattern in a state in which the substrate is stretched, contracting a line width of the first pattern while restoring the stretched substrate, and forming the second pattern having a contracted line width on the restored substrate such that high integration can be achieved.