Invention Grant
- Patent Title: XPS metrology for process control in selective deposition
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Application No.: US16351153Application Date: 2019-03-12
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Publication No.: US10801978B2Publication Date: 2020-10-13
- Inventor: Charles Thomas Larson , Kavita Shah , Wei Ti Lee
- Applicant: NOVA MEASURING INSTRUMENTS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: NOVA MEASURING INSTRUMENTS, INC.
- Current Assignee: NOVA MEASURING INSTRUMENTS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Womble Bond Dickinson (US) LLP
- Agent Joseph Bach, Esq.
- Main IPC: G01N23/2273
- IPC: G01N23/2273 ; H01L21/67 ; C23C16/52 ; C23C16/24 ; C23C16/455 ; C23C16/06

Abstract:
XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
Public/Granted literature
- US20190277783A1 XPS METROLOGY FOR PROCESS CONTROL IN SELECTIVE DEPOSITION Public/Granted day:2019-09-12
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