Invention Grant
- Patent Title: Pattern defect detection method
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Application No.: US16013232Application Date: 2018-06-20
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Publication No.: US10802073B2Publication Date: 2020-10-13
- Inventor: Ryo Shimoda , Kotaro Maruyama
- Applicant: TASMIT, Inc.
- Applicant Address: JP Yokohama
- Assignee: TASMIT, INC.
- Current Assignee: TASMIT, INC.
- Current Assignee Address: JP Yokohama
- Agency: Lathrop GPM LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3c3e9753
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G06T7/00 ; G01R31/307 ; G01N21/95 ; G01N21/956

Abstract:
A pattern defect detection method capable of detecting a pattern defect of a semiconductor integrated circuit with higher accuracy is disclosed. The pattern defect detection method includes: extracting an image of an inspection target pattern from an image of a specimen; identifying a reference pattern from design data, the reference pattern having the same shape and the same position as those of the inspection target pattern; calculating a brightness index value indicating a brightness of an entirety of the inspection target pattern; repeating said extracting an inspection target pattern, said identifying a reference pattern, and said calculating a brightness index value, thereby building mass data containing brightness index values of inspection target patterns and corresponding reference patterns; determining a standard range of brightness index value based on the brightness index values contained in the mass data; and detecting a defect of the inspection target pattern based on whether or not the calculated brightness index value is within the standard range.
Public/Granted literature
- US20190025371A1 PATTERN DEFECT DETECTION METHOD Public/Granted day:2019-01-24
Information query
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