Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US16579664Application Date: 2019-09-23
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Publication No.: US10803917B2Publication Date: 2020-10-13
- Inventor: Fumiyoshi Matsuoka
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C13/00 ; G11C7/10

Abstract:
A semiconductor storage device includes a first bank that includes a first memory cell group and writes data into the first memory cell group upon receipt of a first command, a second bank that includes a second memory cell group and writes data into the second memory cell group upon receipt of the first command, and a delay controller that issues the first command for the first bank upon receipt of a second command, and issues the first command for the second bank after an interval of at least a first period.
Public/Granted literature
- US20200020379A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2020-01-16
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