Invention Grant
- Patent Title: Composition for forming silica layer, silica layer, and electronic device
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Application No.: US16163170Application Date: 2018-10-17
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Publication No.: US10804095B2Publication Date: 2020-10-13
- Inventor: Jin-Hee Bae , Taeksoo Kwak , Byeonggyu Hwang , Kunbae Noh , Jun Sakong , Jinwoo Seo , Junyoung Jang
- Applicant: Samsung SDI Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@354224ed
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C01B21/068 ; C09D183/16 ; C08G77/62

Abstract:
A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).
Public/Granted literature
- US20190189430A1 COMPOSITION FOR FORMING SILICA LAYER, SILICA LAYER, AND ELECTRONIC DEVICE Public/Granted day:2019-06-20
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