Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US16273111Application Date: 2019-02-11
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Publication No.: US10804152B2Publication Date: 2020-10-13
- Inventor: Masaya Shima , Ippei Kume , Eiichi Shin , Eiji Takano , Takashi Shirono , Mika Fujii
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4393d7c9
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/3065 ; H01L23/48
Abstract:
According to one embodiment, a method of manufacturing a semiconductor device includes: bonding a first surface of a device substrate on which a device is formed on a first surface to a support substrate via an adhesive; after bonding the device substrate to the support substrate, grinding and thinning a second surface side opposite to the first surface of the device substrate based on an in-plane processing rate at the time of forming a semiconductor substrate by RIE; after thinning the device substrate, forming a hole penetrating the device substrate by RIE; and burying metal in the hole to forma through electrode.
Information query
IPC分类:
