Invention Grant
- Patent Title: Dissimilar material interface having lattices
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Application No.: US16236101Application Date: 2018-12-28
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Publication No.: US10804201B2Publication Date: 2020-10-13
- Inventor: Archana Venugopal , Benjamin Stassen Cook , Nazila Dadvand , Luigi Colombo
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Dawn Jos; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/532 ; C01B32/184 ; H01L23/522
Abstract:
A structure for a semiconductor device includes a dielectric layer and a metal layer. The structure also includes a plurality of unit cells. Each unit cell is formed of interconnected segments. The plurality of unit cells forms a lattice. The lattice is between the dielectric layer and the metal layer.
Public/Granted literature
- US20190206793A1 DISSIMILAR MATERIAL INTERFACE HAVING LATTICES Public/Granted day:2019-07-04
Information query
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