Invention Grant
- Patent Title: Substrate treatment apparatus, method of manufacturing semiconductor device and workpiece substrate
-
Application No.: US16288896Application Date: 2019-02-28
-
Publication No.: US10804221B2Publication Date: 2020-10-13
- Inventor: Fuyuma Ito , Yasuhito Yoshimizu , Hakuba Kitagawa
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@46899384
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/67 ; H01J37/32

Abstract:
In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.
Public/Granted literature
- US20200091092A1 SUBSTRATE TREATMENT APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WORKPIECE SUBSTRATE Public/Granted day:2020-03-19
Information query
IPC分类: