Invention Grant
- Patent Title: Cointegration of FET devices with decoupling capacitor
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Application No.: US16283333Application Date: 2019-02-22
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Publication No.: US10804262B2Publication Date: 2020-10-13
- Inventor: Juntao Li , Kangguo Cheng , Yi Song
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/07 ; H01L27/092 ; H01L23/522 ; H01L21/8238 ; H01L49/02
Abstract:
A semiconductor structure includes a decoupling capacitor on a semiconductor substrate. The decoupling capacitor includes a multilayer stack structure having one or more active regions on a top surface thereof. The semiconductor structure further includes one or more semiconductor devices on the one or more active regions on the decoupling capacitor.
Public/Granted literature
- US20200273857A1 COINTEGRATION OF FET DEVICES WITH DECOUPLING CAPACITOR Public/Granted day:2020-08-27
Information query
IPC分类:
