Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US16111402Application Date: 2018-08-24
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Publication No.: US10804286B2Publication Date: 2020-10-13
- Inventor: Kazuhide Takamura , Takuya Inatsuka
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@66482cb
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/522 ; H01L23/528 ; H01L29/10 ; H01L27/11568 ; H01L21/311 ; H01L21/02 ; H01L21/768 ; H01L21/033
Abstract:
According to one embodiment, a semiconductor device includes: a stack body including an insulator, a first conductor and a second conductor stacked stepwise by interposing the insulator and electrically disconnected from each other; and a first contact plug which reaches the first conductor from a region above the stack body. The first conductor includes a first portion positioned below the insulator, a second portion positioned above the insulator, and a third portion that electrically connects the first portion of the first conductor and the second portion of the first conductor. The third portion of the first conductor is provided in an opening formed on the insulator.
Public/Granted literature
- US20190280004A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2019-09-12
Information query
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