Invention Grant
- Patent Title: Photodetector
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Application No.: US16694195Application Date: 2019-11-25
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Publication No.: US10804309B2Publication Date: 2020-10-13
- Inventor: Yusuke Otake , Akira Matsumoto , Junpei Yamamoto , Ryusei Naito , Masahiko Nakamizo , Toshifumi Wakano
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7dcb740b com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5b32d51a com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7962666d com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6a31db5e
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/0216 ; H01L31/107 ; H01L31/0232

Abstract:
A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.
Public/Granted literature
- US20200091208A1 PHOTODETECTOR Public/Granted day:2020-03-19
Information query
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