To provide a semiconductor light-emitting device with a multilayer film hardly peeled therefrom and a production method therefor. The light-emitting device has an uneven substrate having an uneven shape on a first surface, a first conduction type first semiconductor layer on the uneven shape of the uneven substrate, a light-emitting layer on the first semiconductor layer, a second conduction type second semiconductor layer on the light-emitting layer, and a third DBR covering at least a part of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer. The light-emitting device is of a flip-chip type. In the periphery of the uneven substrate, the uneven shape has an exposed portion exposed without being covered by the first semiconductor layer. The third DBR covers at least a part of the exposed portion of the uneven shape.