Invention Grant
- Patent Title: Thin film sensor element for a resistance thermometer
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Application No.: US16089585Application Date: 2017-04-12
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Publication No.: US10809136B2Publication Date: 2020-10-20
- Inventor: Jiri Holoubek
- Applicant: Innovative Sensor Technology IST AG
- Applicant Address: CH Ebnet-Kappel
- Assignee: Innovative Sensor Technology IST AG
- Current Assignee: Innovative Sensor Technology IST AG
- Current Assignee Address: CH Ebnet-Kappel
- Agency: Endress+Hauser (USA) Holding Inc.
- Agent Mark A. Logan
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@524713c3
- International Application: PCT/EP2017/058631 WO 20170412
- International Announcement: WO2017/178463 WO 20171019
- Main IPC: G01K1/16
- IPC: G01K1/16 ; G01K7/18 ; H01C7/00

Abstract:
The present disclosure relates to a thin film sensor element for determining and/or monitoring temperature. For this purpose, a resistive structure is provided, which is arranged in a resistive region on a substrate. The resistive structure is so formed that a first section of the resistive structure branches at a first reference point into two branches, and that a second section of the resistive structure branches at a second reference point into two other branches. In a contact region, the four branches are connected with four intermediate conductors in four contact areas, which are insulated from one another. In this way, the thin film sensor element is a real four conductor sensor element, wherein the reference points of the four conductor circuit lie within the resistive region. The resistance thermometer with the thin film sensor element of the invention is distinguished by a high accuracy.
Public/Granted literature
- US20190086274A1 THIN FILM SENSOR ELEMENT FOR A RESISTANCE THERMOMETER Public/Granted day:2019-03-21
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