Invention Grant
- Patent Title: Method of fabricating an integrated circuit with a pattern density-outlier-treatment for optimized pattern density uniformity
-
Application No.: US16587006Application Date: 2019-09-29
-
Publication No.: US10811225B2Publication Date: 2020-10-20
- Inventor: Jyuh-Fuh Lin , Cheng-Hung Chen , Pei-Yi Liu , Wen-Chuan Wang , Shy-Jay Lin , Burn Jeng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01J37/317 ; H01L21/027

Abstract:
The present disclosure provides one embodiment of an IC method. First pattern densities (PDs) of a plurality of templates of an IC design layout are received. Then a high PD outlier template and a low PD outlier template from the plurality of templates are identified. The high PD outlier template is split into multiple subsets of template and each subset of template carries a portion of PD of the high PD outlier template. A PD uniformity (PDU) optimization is performed to the low PD outlier template and multiple individual exposure processes are applied by using respective subset of templates.
Public/Granted literature
Information query