Invention Grant
- Patent Title: Method of cleaning and drying semiconductor substrate
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Application No.: US15937986Application Date: 2018-03-28
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Publication No.: US10811247B2Publication Date: 2020-10-20
- Inventor: Tsutomu Ogihara , Osamu Watanabe , Takeshi Nagata , Naoki Kobayashi , Daisuke Kori
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7912206f
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C11D11/00 ; B08B3/08 ; C11D7/50 ; C11D7/28 ; B81C1/00

Abstract:
A cleaning and drying method of a semiconductor substrate capable of suppressing collapse or breakdown of a pattern which occur at the time of drying a cleaning solution after cleaning the substrate and decomposition of a resin at a bottom of the pattern, and capable of removing the cleaning solution with good efficiency without using a specific device.
Public/Granted literature
- US20180315594A1 METHOD OF CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE Public/Granted day:2018-11-01
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