Invention Grant
- Patent Title: Methods of processing semiconductor device structures and related systems
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Application No.: US15851178Application Date: 2017-12-21
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Publication No.: US10811267B2Publication Date: 2020-10-20
- Inventor: Ken Tokashiki
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/32 ; H01L21/308 ; H01L21/311 ; H01L21/683 ; H01L21/02 ; H01L21/3213 ; H01L21/67 ; H01L27/11582
Abstract:
Methods of processing a semiconductor device structure comprise cooling an electrostatic chuck (ESC) for the semiconductor device structure, which comprises tiers of alternating materials including at least one dielectric material, to a temperature of −30° C. or less, forming an opening in the semiconductor device structure with a plasma of a gas comprising a hydrogen-based gas and a fluorine-based gas in which the hydrogen-based gas comprises between about 10 vol % and 90 vol %. Other methods of processing a semiconductor device structure comprise cooling an ESC for the semiconductor device structure to a temperature of −30° C. or less, applying a low frequency radio frequency (RF) having a non-sinusoidal waveform to the ESC, and forming an opening in the semiconductor device structure with a generated plasma. A processing system includes an ESC, a coolant system, and a low frequency RF power source generating a non-sinusoidal waveform comprising a combination of multiple sinusoidal waveforms.
Public/Granted literature
- US20190198333A1 METHODS OF PROCESSING SEMICONDUCTOR DEVICE STRUCTURES AND RELATED SYSTEMS Public/Granted day:2019-06-27
Information query
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