Invention Grant
- Patent Title: Devices employing thermal and mechanical enhanced layers and methods of forming same
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Application No.: US16458877Application Date: 2019-07-01
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Publication No.: US10811394B2Publication Date: 2020-10-20
- Inventor: Chen-Hua Yu , An-Jhih Su , Wei-Yu Chen , Ying-Ju Chen , Tsung-Shu Lin , Chin-Chuan Chang , Hsien-Wei Chen , Wei-Cheng Wu , Li-Hsien Huang , Chi-Hsi Wu , Der-Chyang Yeh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/56 ; H01L21/48 ; H01L21/78 ; H01L23/31 ; H01L23/498 ; H01L25/00
Abstract:
A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.
Public/Granted literature
- US20190326259A1 Devices Employing Thermal and Mechanical Enhanced Layers and Methods of Forming Same Public/Granted day:2019-10-24
Information query
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