Invention Grant
- Patent Title: Semiconductor device having fins
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Application No.: US16035476Application Date: 2018-07-13
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Publication No.: US10811537B2Publication Date: 2020-10-20
- Inventor: Che-Yu Lin , Ming-Hua Yu , Tze-Liang Lee , Chan-Lon Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/167 ; H01L29/66 ; H01L29/10 ; H01L29/06 ; H01L23/544 ; H01L21/762 ; H01L21/02 ; H01L21/265 ; H01L21/324
Abstract:
A device includes a semiconductor substrate, an isolation structure, and an epitaxial fin portion. The semiconductor substrate has an implanted region. The implanted region has a bottom fin portion thereon, in which a depth of the implanted region is smaller than a thickness of the semiconductor substrate. The isolation structure surrounds the bottom fin portion. The epitaxial fin portion is disposed over a top surface of the bottom fin portion, in which the implanted region of the semiconductor substrate includes oxygen and has an oxygen concentration lower than about 1·E+19 atoms/cm3.
Public/Granted literature
- US20180342621A1 SEMICONDUCTOR DEVICE HAVING FINS Public/Granted day:2018-11-29
Information query
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