Invention Grant
- Patent Title: Semiconductor light emitting element and method for manufacturing the same
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Application No.: US15963544Application Date: 2018-04-26
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Publication No.: US10811577B2Publication Date: 2020-10-20
- Inventor: Shinichiro Inoue , Naoki Tamari
- Applicant: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY , STANLEY ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY,STANLEY ELECTRIC CO., LTD.
- Current Assignee: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY,STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Keating & Bennett, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@794679f0
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/00 ; H01L33/22 ; H01L33/32

Abstract:
The semiconductor light emitting element is a semiconductor light emitting element comprising a semiconductor layer including a light emitting layer, wherein a surface of the semiconductor light emitting element includes a light extraction surface. At least one of the light extraction surface and an interface between two layers having different refractive indexes in the semiconductor light emitting element is provided with a periodic recessed and projecting structure having a period that exceeds 0.5 times as great as a wavelength of light emitted from the light emitting layer, and a minute recessed and projecting structure located on a surface of the periodic recessed and projecting structure and having an average diameter that is not more than 0.5 times as great as the wavelength of the light.
Public/Granted literature
- US20180248088A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-08-30
Information query
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