Invention Grant
- Patent Title: Photolithography method and system based on high step slope
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Application No.: US15905969Application Date: 2018-02-27
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Publication No.: US10816903B2Publication Date: 2020-10-27
- Inventor: Jiale Su
- Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Widerman Malek, PL
- Agent Mark Malek
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@26a9fe87
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F1/70 ; G03F1/38

Abstract:
A photolithography system based on a high step slope may include a depositing unit configured to manufacture a sacrificial layer having high step slope on a substrate. The system may also include a coating unit configured to coat a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer. The system may further include a photolithography unit configured to perform one or more photolithography processes to the photolithographic layer. The photolithography unit may comprise a plurality of masks of compensation patterns. The compensation pattern may comprise a slope-top compensation pattern and a slope compensation pattern.
Public/Granted literature
- US20180188652A1 PHOTOLITHOGRAPHY METHOD AND SYSTEM BASED ON HIGH STEP SLOPE Public/Granted day:2018-07-05
Information query
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