Disclosed is a semiconductor memory device including a memory cell based on a static random access memory having a 6T or 4T2R configuration and including a first internal node, a second internal node, a first ferroelectric capacitor, and a second ferroelectric capacitor, the first ferroelectric capacitor and the second ferroelectric capacitor having respective first ends connected respectively to the first internal node and the second internal node. For recovering data stored in a non-volatile fashion in the first ferroelectric capacitor and the second ferroelectric capacitor, a first access transistor connected between the first internal node and a first bit line and a second access transistor connected between the second internal node and a second bit line are turned on, and respective capacitive components of the first bit line and the second bit line are used as load capacitances.