Invention Grant
- Patent Title: Etching method and residue removal method
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Application No.: US16026589Application Date: 2018-07-03
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Publication No.: US10818506B2Publication Date: 2020-10-27
- Inventor: Noriyuki Kobayashi , Toshinori Debari
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7d406cb9
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/677 ; H01L21/02 ; H01L21/67 ; H01L21/3105

Abstract:
An etching method of etching a silica-based residue containing a base component formed in an SiO2 film, includes selectively etching the silica-based residue by supplying an HF gas, an H2O gas or an alcohol gas to a target substrate having the SiO2 film, on which the silica-based residue is formed, and removing an etching residue caused by the selectively etching the silica-based residue, after the selectively etching the silica-based residue. The removing an etching residue includes a first process of supplying an H2O gas or an alcohol gas to the target substrate and a second process of heating the target substrate after the first process.
Public/Granted literature
- US20190013207A1 ETCHING METHOD AND RESIDUE REMOVAL METHOD Public/Granted day:2019-01-10
Information query
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