Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US16363374Application Date: 2019-03-25
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Publication No.: US10818541B2Publication Date: 2020-10-27
- Inventor: Hsih-Yang Chiu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L29/06 ; H01L21/3065 ; H01L21/3105 ; H01L21/02 ; H01L21/311
Abstract:
The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a semiconductor substrate, an air gap region, a capping layer, and an isolating layer. The air gap region is disposed in the semiconductor substrate. The capping layer is disposed on the air gap region. The isolating layer is disposed on the semiconductor substrate and partially encircles the capping layer.
Public/Granted literature
- US20200211893A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-07-02
Information query
IPC分类:
