Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US16442132Application Date: 2019-06-14
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Publication No.: US10818615B2Publication Date: 2020-10-27
- Inventor: Ying-Ju Chen , Hsien-Wei Chen , Ming-Fa Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/31 ; H01L23/00 ; H01L23/498 ; H01L21/48 ; H01L23/538

Abstract:
A semiconductor structure includes a die, a molding surrounding the die, a first seal ring disposed over the molding, and a second seal ring disposed below the molding. The semiconductor structure further includes a first interconnect structure disposed below the first surface of the die and a second interconnect structure disposed over the second surface and the molding. The first seal ring is disposed in the second interconnect structure and disposed over the molding, and the second seal ring is provided within the die and the first interconnect structure.
Public/Granted literature
- US10763224B2 Semiconductor structure Public/Granted day:2020-09-01
Information query
IPC分类: