Invention Grant
- Patent Title: Gate noble metal nanoparticles
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Application No.: US16291597Application Date: 2019-03-04
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Publication No.: US10818666B2Publication Date: 2020-10-27
- Inventor: Fatma Arzum Simsek-Ege , Kamal M. Karda , Haitao Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/108 ; H01L21/285 ; H01L21/28

Abstract:
An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by a channel. The apparatus includes a gate opposing the channel. The gate includes noble metal nanoparticles. A sense line is coupled to the first source/drain region and a storage node is coupled to the second source/drain region.
Public/Granted literature
- US20200286893A1 GATE NOBLE METAL NANOPARTICLES Public/Granted day:2020-09-10
Information query
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