Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16407916Application Date: 2019-05-09
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Publication No.: US10818747B2Publication Date: 2020-10-27
- Inventor: Eisuke Kodama
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b7cb89
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02 ; H01L21/324 ; H01L21/265 ; H01L27/06
Abstract:
A semiconductor device capable of lowering a temperature coefficient and increasing a sheet resistance value (ρs value) and a manufacturing method thereof are provided. The resistive layer RL is made of polycrystalline silicon containing boron. The concentration distribution of boron in the thickness direction of the resistive layer RL includes a concentration peak PC and a low concentration portion LC having a concentration of boron lower than the concentration of boron in the concentration peak PC by two orders of magnitude or more.
Public/Granted literature
- US20190371881A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-12-05
Information query
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