Invention Grant
- Patent Title: Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device
-
Application No.: US15374012Application Date: 2016-12-09
-
Publication No.: US10818749B2Publication Date: 2020-10-27
- Inventor: Anton Mauder , Wolfgang Bergner , Jens Peter Konrath , Dethard Peters , Reinhold Schoerner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3c38f54e
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L27/07 ; H01L21/82 ; H01L29/739 ; H01L29/808 ; H01L29/872 ; H01L29/16 ; H01L27/06 ; H01L29/861 ; H01L29/40 ; H01L29/10
Abstract:
A semiconductor device includes a plurality of drift regions of a plurality of field effect transistor structures arranged in a semiconductor substrate. The plurality of drift regions has a first conductivity type. The semiconductor device further includes a plurality of compensation regions arranged in the semiconductor substrate. The plurality of compensation regions has a second conductivity type. Each drift region of the plurality of drift regions is arranged adjacent to at least one compensation region of the plurality of compensation regions. The semiconductor device further includes a Schottky diode structure or metal-insulation-semiconductor gated diode structure arranged at the semiconductor substrate.
Public/Granted literature
- US20170170264A1 Semiconductor Devices and a Circuit for Controlling a Field Effect Transistor of a Semiconductor Device Public/Granted day:2017-06-15
Information query
IPC分类:
