Invention Grant
- Patent Title: Semiconductor device with cap element
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Application No.: US16229213Application Date: 2018-12-21
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Publication No.: US10818752B2Publication Date: 2020-10-27
- Inventor: Shing-Huang Wu , Jian-Shian Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/08 ; H01L29/78 ; H01L21/02 ; H01L29/66 ; H01L21/3065 ; H01L29/165 ; H01L29/04
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a source/drain structure adjacent to the gate stack. The semiconductor device structure also includes a cap element over the source/drain structure. The cap element has a first top plane and the source/drain structure has a second top plane. The first top plane of the cap element is wider than the second top plane of the source/drain structure. A surface orientation of the first top plane of the cap element and a surface orientation of a side surface of the cap element are different from each other.
Public/Granted literature
- US20190115429A1 SEMICONDUCTOR DEVICE WITH CAP ELEMENT Public/Granted day:2019-04-18
Information query
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