Invention Grant
- Patent Title: Schottky diode integrated into superjunction power MOSFETs
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Application No.: US15843327Application Date: 2017-12-15
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Publication No.: US10818788B2Publication Date: 2020-10-27
- Inventor: Yi Su , Madhur Bobde
- Applicant: Alpha and Omega Semiconductor (Cayman) Ltd.
- Applicant Address: KY Grand Cayman
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.
- Current Assignee Address: KY Grand Cayman
- Agency: JDI Patent
- Agent Joshua Isenberg; Robert Pullman
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/872 ; H01L29/66 ; H01L29/06 ; H01L29/47 ; H01L29/10 ; H01L29/423 ; H01L29/08 ; H01L21/266 ; H01L21/306 ; H01L21/28 ; H01L21/321 ; H01L29/45
Abstract:
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprises an active cell area including a plurality of superjunction trench power MOSFETs, and a Schottky diode area including a plurality of Schottky diodes formed in the drift region having the superjunction structure. Each of the integrated Schottky diodes includes a Schottky contact between a lightly doped semiconductor layer and a metallic layer.
Public/Granted literature
- US20190189796A1 SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS Public/Granted day:2019-06-20
Information query
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