A TFT substrate has a semiconductor layer, a gate metal layer including a gate electrode, a gate insulating layer, a source metal layer including a source electrode and a drain electrode, and a contact layer including a source contact portion and a drain contact portion. The source metal layer has a laminated structure including a lower source metal layer and an upper source metal layer, and an edge of the lower source metal layer is positioned inside an edge of the upper source metal layer. At least a portion, which does not overlap the source contact portion or the drain contact portion in the edge of the lower source metal layer and the edge of the upper source metal layer in the plurality of antenna unit regions when viewed in a direction normal to the dielectric substrate, is covered with at least two inorganic layers.