Invention Grant
- Patent Title: Carrier substrate
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Application No.: US15488519Application Date: 2017-04-17
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Publication No.: US10820426B2Publication Date: 2020-10-27
- Inventor: Chun-Ting Lin
- Applicant: Unimicron Technology Corp.
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: JCIPRNET
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b75b2fe
- Main IPC: H05K3/40
- IPC: H05K3/40 ; H05K3/46 ; H01L21/67 ; H01L21/673 ; H01L21/677 ; H05K1/11 ; H05K3/06 ; H01L23/00

Abstract:
A carrier substrate includes a circuit structure layer, a first solder resist layer, a second solder resist layer and conductive towers. The circuit structure layer includes a core structure layer, a first circuit layer and a second circuit layer. The first solder resist layer has first openings exposing a portion of the first circuit layer. The second solder resist layer has second openings exposing a portion of the second circuit layer. The conductive towers are disposed at the first openings, higher than a surface of the first solder resist layer and connected with the first openings exposed by the first circuit layer, wherein a diameter of each of the conductive towers gradually increases by a direction from away-from the first openings towards close-to the first openings. A diameter of the second conductive towers is greater than that of the first conductive towers.
Public/Granted literature
- US20170223841A1 CARRIER SUBSTRATE Public/Granted day:2017-08-03
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